| PART |
Description |
Maker |
| HY5V26CF HY5V26CLF |
8Mx16|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 8M × 16位| 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
Vishay Intertechnology, Inc.
|
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| EDS1232JCBH-75-E |
128M bits SDRAM
|
Elpida Memory
|
| EDS1232JHTA EDS1232JHTA-6B-E EDS1232JHTA-75-E |
128M bits SDRAM
|
Elpida Memory
|
| EDS1208AATA-75-E EDS1208AATA |
128M bits SDRAM
|
Elpida Memory
|
| K4D263238I-UC |
128M GDDR SDRAM
|
Samsung
|
| EDS1232JCBH-75 |
128M bits SDRAM
|
http://
|
| EDS1232ECBH-75 |
128M bits SDRAM
|
http://
|
| EDS1216AATA EDS1216AATA-75-E |
128M bits SDRAM
|
Elpida Memory
|
| M2U1G64TU8HA2B-3C M2U1G64TU8HA0B-3C M2Y1G64TU8HA2B |
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 DIMM-240
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 GREEN, DIMM-240
|
Nanya Technology, Corp.
|
| UPD45128163G5-A75L-9JF UPD45128841G5-A75L-9JF UPD4 |
128M-bit Synchronous DRAM 4-bank/ LVTTL
128M-bit Synchronous DRAM 4-bank, LVTTL 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
